STL21N65M5 N-channel 650 V, 0.175 Ohm, 2.7 A PowerFLAT(TM) 8x8 HV MDmesh(TM) V power MOSFET
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STL21N65M5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL21N65M5 |
Active |
|
1000 |
PowerFLAT 8x8 HV |
Tape And Reel |
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STL21N65M5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL21N65M5 :DS6814: N-channel 650 V, 0.175 Ω, 17 A ultra low gate charge MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package |
2 |
1049KB |
MARKETING BROCHURES
CONFERENCE PAPERS
