STL3NM60N N-channel 600 V, 1.5 Ohm, 2.2 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 3.3 x 3.3 HV package
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
|
内部原理图
 |
STL3NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL3NM60N |
Active |
|
1000 |
FPN 8L 3.3X3.3 |
Tape And Reel |
|
STL3NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STL3NM60N :DS8889: N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in PowerFLAT™ 3.3 x 3.3 HV package |
1 |
788KB |
