STL60N32N3LL Dual N-channel 30 V, 0.005 Ohm, 15 A PowerFLAT(TM) 5x6 asymmetrical double island, STripFET(TM) Power MOSFET
This device is a dual N-channel Power MOSFET which utilizes the latest generation of design rules for ST's proprietary STripFET™ V and STripFET™ VI DeepGATE™ technology. The lowest available RDS(on)* Qg in this chip scale package renders the device suitable for the most demanding DC-DC converter applications, where high power density is required
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
- Switching applications
- Automotive
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测试电路图
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STL60N32N3LL 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL60N32N3LL |
Active |
|
1000 |
PowerFLAT 5x6 A.D.I. |
Tape And Reel |
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STL60N32N3LL |
DATASHEET
| 描述 |
版本 |
大小 |
| STL60N32N3LL :DS6760: Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT™ 5x6 asymmetrical double island, STripFET™ Power MOSFET |
3 |
1421KB |
