STL6N3LLH6 N-channel 30 V, 0.021 Ohm typ., 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT 2x2 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages

技术特性

RDS(on)* Qgindustry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge

应用领域

Switching applications

内部原理图

STL6N3LLH6 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STL6N3LLH6	Preview		1000	PowerFLAT 5x6 D.I.	Tape And Reel		STL6N3LLH6

DATASHEET

描述	版本	大小
STL6N3LLH6 :DS9055: N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package	2	1078KB

APPLICATION NOTES

描述	版本	大小
AN1703: Guidelines for using ST's MOSFET smd Packages	1	760KB