STN1NF20 N-channel 200 V, 1.1 Ohm, 1 A STripFET(TM) II Power MOSFET in SOT-223 package
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements
技术特性
- 100% avalanche tested
- Low gate charge
- Exceptional dv/dt capability
应用领域
|
内部原理图
 |
STN1NF20 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STN1NF20 |
Active |
|
1000 |
SOT-223 |
Tape And Reel |
|
STN1NF20 |
DATASHEET
| 描述 |
版本 |
大小 |
| STN1NF20 :DS8693: N-channel 200 V, 1.1 Ω, 1 A SOT-223 STripFET™ II Power MOSFET |
1 |
649KB |
