STP11NM50N N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency
技术特性
- Worldwide best RDS(on) * area
- Higher VDSSrating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
应用领域
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内部原理图
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STP11NM50N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP11NM50N |
Active |
|
1000 |
TO-220AB |
Tube |
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STP11NM50N |
DATASHEET
| 描述 |
版本 |
大小 |
| STP11NM50N :DS8920: N-channel 650 V, 0.43 Ω, 9 A MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages |
1 |
718KB |
