STP11NM60ND N-channel 600V - 0.37Ohm - 10A - FDmesh II Power MOSFET TO-220
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters
技术特性
- The worldwide best RDS(on)* area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
应用领域
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内部原理图
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STP11NM60ND 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP11NM60ND |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP11NM60ND |
DATASHEET
| 描述 |
版本 |
大小 |
| STP11NM60ND :DS5797: N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I²PAK, TO-220, I²PAK, IPAK, DPAK |
2 |
719KB |
CONFERENCE PAPERS
