STP11NM65N N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- low gate input resistance
应用领域
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内部原理图
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STP11NM65N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP11NM65N |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP11NM65N |
DATASHEET
| 描述 |
版本 |
大小 |
| STP11NM65N :DS5257: N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, I²PAK, I²PAKFP and TO-220 packages |
3 |
1170KB |
