STP165N10F4 N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET™2; DeepGATE™2; Power MOSFET
The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance
技术特性
- N-channel enhancement mode
- 100% avalanche rated
- Low gate charge
- Very low on-resistance
应用领域
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内部原理图
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STP165N10F4 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP165N10F4 |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP165N10F4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP165N10F4 :N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET |
2 |
667KB |
