STP16N65M5 N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency

技术特性
  • Worldwide best RDS(on)
  • Higher VDSSrating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested
应用领域
  • Switching application
内部原理图
STX16N65M5 功能框图
STP16N65M5 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STP16N65M5 Active   1000 TO-220AB Tube   STP16N65M5
DATASHEET
描述 版本 大小
STP16N65M5 :DS5989: N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 4 1100KB
MARKETING BROCHURES
描述 版本 大小
MDmesh V power MOSFETs 1.0 1242KB
CONFERENCE PAPERS
描述 版本 大小
Latest ST MOSFET and IGBT technologies for the best efficiency in solar inverters 2.1 460KB