STP190N55LF3 N-channel 55 V, 2.9 mOHM, 120 A, TO-220
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
技术特性
- Logic level drive
- 100% avalanche tested
应用领域
- Switching applications
- Automotive
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内部原理图
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STP190N55LF3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP190N55LF3 |
Active |
|
1000 |
TO-220 |
Tube |
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STP190N55LF3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STP190N55LF3 :DS5987: N-channel 55 V, 2.9 mΩ, 120 A, TO-220 STripFET™ Power MOSFET |
1 |
644KB |
