STP20NM65N N-channel 650V, 0.250 Ohm, 15 A, TO-220 second generation MDmesh(TM) Power MOSFET
These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100 % avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STP20NM65N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STP20NM65N |
Active |
|
1000 |
TO-220AB |
Tube |
|
STP20NM65N |
DATASHEET
| 描述 |
版本 |
大小 |
| STP20NM65N :DS5439: N-Channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET |
2 |
859KB |
