STP8NM60ND N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters

技术特性
  • The worldwide best RDS(on)* area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities
应用领域
  • Switching application
内部原理图
STx8NM60ND 功能框图
STP8NM60ND 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STP8NM60ND NRND   1000 TO-220AB Tube   STP8NM60ND
DATASHEET
描述 版本 大小
STP8NM60ND :DS5991: N-channel 600 V, 0.59 Ω, 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK 1 722KB
CONFERENCE PAPERS
描述 版本 大小
Latest ST MOSFET and IGBT technologies for the best efficiency in solar inverters 2.1 460KB