STPSC1206 600 V power Schottky silicon carbide diode
These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of the temperature.
Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions.
技术特性
- No reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC boost diode
STPSC1206 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STPSC1206D |
Active |
|
1000 |
DO 220 |
Tube |
|
STPSC1206D |
DATASHEET
| 描述 |
版本 |
大小 |
| STPSC1206: 600 V power Schottky silicon carbide diode |
10 |
133KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN3152: The right technology for solar converters |
1 |
419KB |
| AN3203: EVL250W-ATX80PL: 250W ATX SMPS demonstration board |
2 |
2723KB |
PRODUCT PRESENTATIONS
| 描述 |
版本 |
大小 |
| STPSC1206 : ST products and solutions for solar energy |
1.0.0 |
2136KB |
| STPSC1206 : Energy-efficient solutions for offline LED lighting and general illumination |
2.0.0 |
2646KB |
FLYERS
