STPSC406 600 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

技术特性
STPSC406 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STPSC406G-TR Active   1000 DPAK Tape And Reel   STPSC406G-TR
STPSC406D Active   1000 DO 220 Tube   STPSC406D
DATASHEET
描述 版本 大小
STPSC406: 600 V power Schottky silicon carbide diode 10 133KB
APPLICATION NOTES
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PRODUCT PRESENTATIONS
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STPSC406 : ST products and solutions for solar energy 1.0.0 2136KB
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FLYERS
描述 版本 大小
FL600VSI0310: 600 V SiC diodes 1.0 665KB
SPICE MODELS
描述 版本 大小
STPSC406: Silicon-carbide Schottky diode PSpice models (.lib & .olb) 1.0 174KB