STPSC4H065 650 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases

技术特性
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • High forward surge capability
管脚定义图

STPSC4H065 功能框图

STPSC4H065 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STPSC4H065B-TR Active   1000 DPAK Tape And Reel   STPSC4H065B-TR
STPSC4H065D Active   1000 TO-220AC Tube   STPSC4H065D
DATASHEET
描述 版本 大小
STPSC4H065 :DS9222: 650 V power Schottky silicon carbide diode 2 104KB