STPSC8H065 650 V power Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases
技术特性
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STPSC8H065 订购信息
| 订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
| STPSC8H065G-TR | Active | 1000 | D²PAK | Tape And Reel | STPSC8H065G-TR | ||
| STPSC8H065B-TR | Active | 1000 | DPAK | Tape And Reel | STPSC8H065B-TR | ||
| STPSC8H065D | Active | 1000 | TO-220AC | Tube | STPSC8H065D |
DATASHEET
| 描述 | 版本 | 大小 |
| STPSC8H065 :DS9225: 650 V power Schottky silicon carbide diode | 2 | 119KB |
