STRH8N10 Rad-Hard N-Channel 100V - 6A MOSFET
This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.
技术特性
- Fast switching
- 100% avalanche tested
- Hermetic package
- 70 krad TID
- SEE radiation hardened
STRH8N10 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STRH8N10N1 |
Active |
1.2 |
1000 |
TO-39 |
|
|
STRH8N10N1 |
DATASHEET
| 描述 |
版本 |
大小 |
| DS7120: Rad-Hard N-channel 100 V, 6 A Power MOSFET |
2 |
496KB |
SPICE MODELS
