STS19N3LLH6 N-channel 30 V, 0.0049 Ohm, 19 A, SO-8 STripFET(TM) VI DeepGATE(TM) Power MOSFET
This product utilizes the 6thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
应用领域
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内部原理图
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STS19N3LLH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STS19N3LLH6 |
Active |
|
1000 |
SO-8 |
Tube |
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STS19N3LLH6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STS19N3LLH6 :DS7305: N-channel 30 V, 0.0049 Ω, 19 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET |
1 |
858KB |
