STS6PF3LLH6 P-channel 30 V, 0.028 Ohm typ., 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a SO-8 package
This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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内部原理图
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STS6PF3LLH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STS6PF3LLH6 |
Proposal |
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1000 |
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STS6PF3LLH6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STS6PF3LLH6 :DS9353: P-channel 30 V, 0.028 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SO-8 package |
1 |
341KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
