STS8DN3LLH5 N-channel 30 V, SO-8, Power MOSFETs
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM
技术特性
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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内部原理图
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STS8DN3LLH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STS8DN3LLH5 |
Active |
|
1000 |
SO-8 |
Tube |
|
STS8DN3LLH5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STS8DN3LLH5 :Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET™ V Power MOSFET |
1 |
773KB |
CONFERENCE PAPERS
