STT13005D High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies

技术特性
  • Integrated antiparallel collector-emitter diode
  • High voltage capability
  • Minimum lot-to-lot spread for reliable operation
  • Very high switching speed
应用领域
  • Electronic ballast for fluorescent lighting
  • Flyback and forward single transistor low power converters
内部原理图
STT13005D 功能框图
STT13005D 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STT13005D-K Active   1000 SOT-32 Poly Bag   STT13005D-K
DATASHEET
描述 版本 大小
STT13005D :DS5890: High voltage fast-switching NPN power transistor 2 261KB