STT5N2VH5 N-channel 20 V, 0.025 Ohm typ., 5 A STripFET(TM) V Power MOSFET in SOT23-6L package
These devices are N-channel Power MOSFETs developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class
技术特性
- Very low profile package
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
应用领域
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内部原理图
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STT5N2VH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STT5N2VH5 |
Preview |
|
1000 |
SOT23-6L |
Tape And Reel |
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STT5N2VH5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STT5N2VH5 :DS9320: N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in SOT-23 and SOT23-6L packages |
1 |
590KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
