STV250N55F3 N-channel 55 V, 1.5 mOhm, 200 A STripFET(TM) III Power MOSFET in PowerSO-10 package
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance
技术特性
- Conduction losses reduced
- Low profile, very low parasitic inductance
应用领域
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内部原理图
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STV250N55F3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STV250N55F3 |
Active |
|
1000 |
PowerSo-10 |
Tape And Reel |
|
STV250N55F3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STV250N55F3 :DS5563: N-channel 55 V, 1.5 mΩ, 200 A STripFET™ III Power MOSFET in PowerSO-10 package |
5 |
727KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
