STW13NM60N N-channel 600 V, 0.28 Ohm, 11 A MDmesh(TM) II Power MOSFET in TO-247
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STW13NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STW13NM60N |
Active |
|
1000 |
TO-247 |
Tube |
|
STW13NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STW13NM60N :DS6112: N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 |
4 |
1415KB |
