STW27NM60ND N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters
技术特性
- The worldwide best RDS(on)*area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
应用领域
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内部原理图
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STW27NM60ND 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STW27NM60ND |
Active |
|
1000 |
TO-247 |
Tube |
|
STW27NM60ND |
DATASHEET
| 描述 |
版本 |
大小 |
| STW27NM60ND :DS6108: N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET (with fast diode) in D²PAK, TO-247 |
3 |
507KB |
