STW55NM60ND N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters

技术特性
  • The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capabilities
应用领域
  • Switching applications
内部原理图
STW55NM60ND 功能框图
STW55NM60ND 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STW55NM60ND Active   1000 TO-247 Tube   STW55NM60ND
DATASHEET
描述 版本 大小
STW55NM60ND :DS5594: N-channel 600 V - 0.047 Ω - 51 A TO-247 FDmesh™ II Power MOSFET (with fast diode) 2 293KB
CONFERENCE PAPERS
描述 版本 大小
Latest ST MOSFET and IGBT technologies for the best efficiency in solar inverters 2.1 460KB