STW60N65M5 N-channel 650 V, 0.049 Ohm, 46 A MDmesh(TM) V Power MOSFET in TO-247
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
技术特性
- Worldwide best RDS(on) * area amongst the silicon based devices
- Higher VDSSrating
- High dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
应用领域
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内部原理图
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STW60N65M5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STW60N65M5 |
Active |
|
1000 |
TO-247 |
Tube |
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STW60N65M5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STW60N65M5 :DS7029: N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF |
2 |
971KB |
MARKETING BROCHURES
