STY139N65M5 N-channel 650 V, 0.014 Ohm, 130 A, MDmesh(TM) V Power MOSFET in Max247 package

The device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency

技术特性
  • Max247 worldwide best RDS(on)
  • Higher VDSSrating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested
应用领域
  • Switching applications
内部原理图
STY139N65M5 功能框图
STY139N65M5 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STY139N65M5 Active   1000 Max247 Tube   STY139N65M5
DATASHEET
描述 版本 大小
STY139N65M5 :DS8904: N-channel 650 V, 0.014 Ω, 130 A, MDmesh™ V Power MOSFET in Max247 package 3 932KB
MARKETING BROCHURES
描述 版本 大小
MDmesh V power MOSFETs 1.0 1242KB
CONFERENCE PAPERS
描述 版本 大小
Latest ST MOSFET and IGBT technologies for the best efficiency in solar inverters 2.1 460KB