LM358 二路通用运算放大器

These devices consist of two independent, high-gain, frequency-compensated operational amplifiers designed to operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 32 V (3 V to 26 V for the LM2904), and VCC is at least 1.5 V more positive than the input common-mode voltage. The low supply-current drain is independent of the magnitude of the supply voltage.

Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier circuits that now can be implemented more easily in single-supply-voltage systems. For example, these devices can be operated directly from the standard 5-V supply used in digital systems and easily provide the required interface electronics without additional ±5-V supplies


LM158 LM258 LM358
Iq per channel(Max)(mA)   0.6   0.6  
Vn at 1kHz(Typ)(nV/rtHz)   40   40  
IIB(Max)(pA) 300000   150000   250000  
Slew Rate(Typ)(V/us)   0.3   0.3  
GBW(Typ)(MHz)   0.7   0.7  
Spec'd at Vs(V)   5   5  
Vs(Min)(V)   3   3  
Vs(Max)(V)   32   32  
VIO (Full Range)(Max)(mV) 7   7   9  
Number of Channels 2   2   2  
Pin/Package 20LCCC, 8CDIP   8MSOP, 8PDIP, 8SOIC   8MSOP, 8PDIP, 8SO, 8SOIC, 8TSSOP  
Open Loop Gain(Min)(dB)     88  
Offset Drift(Typ)(uV/C) 7   7   7  
Offset Voltage (+/-)(Max)(mV)   7   9  
Available Channels D   D   D  
Operating Temperature Range(C) -55 to 125   -25 to 85   0 to 70  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10)   3   3  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10)   32   32  
VIO (25 deg C)(Max)(mV) 5   5   7  
CMRR(Min)(dB) 70   70   65
LM358 特性
LM358 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
LM358D ACTIVE 0 to 70 0.12 | 1ku SOIC (D) | 8 75 | TUBE  
LM358DE4 ACTIVE 0 to 70 0.12 | 1ku SOIC (D) | 8 75 | TUBE  
LM358DG4 ACTIVE 0 to 70 0.12 | 1ku SOIC (D) | 8 75 | TUBE  
LM358DGKR ACTIVE 0 to 70 0.10 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LM358DGKRG4 ACTIVE 0 to 70 0.10 | 1ku MSOP (DGK) | 8 2500 | LARGE T&R  
LM358DR ACTIVE 0 to 70 0.10 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM358DRE4 ACTIVE 0 to 70 0.10 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM358DRG3 ACTIVE 0 to 70 0.10 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM358DRG4 ACTIVE 0 to 70 0.10 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
LM358P ACTIVE 0 to 70 0.13 | 1ku PDIP (P) | 8 50 | TUBE  
LM358PE4 ACTIVE 0 to 70 0.13 | 1ku PDIP (P) | 8 50 | TUBE  
LM358 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
LM358D Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358D LM358D
LM358DE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DE4 LM358DE4
LM358DG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DG4 LM358DG4
LM358DGKR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DGKR LM358DGKR
LM358DGKRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DGKRG4 LM358DGKRG4
LM358DR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DR LM358DR
LM358DRE4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DRE4 LM358DRE4
LM358DRG3 Green (RoHS & no Sb/Br)  CU SN  Level-1-260C-UNLIM LM358DRG3 LM358DRG3
LM358DRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM LM358DRG4 LM358DRG4
LM358P Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type LM358P LM358P
LM358PE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type LM358PE4 LM358PE4
LM358 应用技术支持与电子电路设计开发资源下载
  1. LM358 数据资料 dataSheet 下载.PDF
  2. TI 德州仪标准线性放大器产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)