TLC27L1 LinCMOS(TM) 低功耗运算放大器

The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable amplifier. These devices use the Texas Instruments silicon-gate LinCMOS™ technology, which provides offset-voltage stability far exceeding the stability available with conventional metal-gate processes.

Three offset-voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L1 (10 mV) to the TLC27L1B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs


TLC27L1
Number of Channels 1  
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 3  
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16  
Iq per channel(Max)(mA) 0.017  
GBW(Typ)(MHz) 0.085  
Slew Rate(Typ)(V/us) 0.03  
VIO (25 deg C)(Max)(mV) 10  
Offset Drift(Typ)(uV/C) 1.1  
IIB(Max)(pA) 600  
CMRR(Min)(dB) 65  
Vn at 1kHz(Typ)(nV/rtHz) 68  
Rating Catalog  
Pin/Package 8PDIP, 8SOIC  
Approx. Price (US$) 0.37 | 1ku  
Operating Temperature Range(C) -40 to 85,0 to 70  
TLC27L1 特性
TLC27L1 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC27L1CD ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 75 | TUBE  
TLC27L1CDG4 ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 75 | TUBE  
TLC27L1CDR ACTIVE 0 to 70 0.37 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC27L1CDRG4 ACTIVE 0 to 70 0.37 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC27L1CP ACTIVE 0 to 70 0.37 | 1ku PDIP (P) | 8 50 | TUBE  
TLC27L1CPE4 ACTIVE 0 to 70 0.37 | 1ku PDIP (P) | 8 50 | TUBE  
TLC27L1ID ACTIVE -40 to 85 0.47 | 1ku SOIC (D) | 8 75 | TUBE  
TLC27L1IDG4 ACTIVE -40 to 85 0.47 | 1ku SOIC (D) | 8 75 | TUBE  
TLC27L1IDR ACTIVE -40 to 85 0.39 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC27L1IDRG4 ACTIVE -40 to 85 0.39 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC27L1IP ACTIVE -40 to 85 0.39 | 1ku PDIP (P) | 8 50 | TUBE  
TLC27L1IPE4 ACTIVE 0 to 70 0.39 | 1ku PDIP (P) | 8 50 | TUBE  
TLC27L1 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC27L1CD Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1CD TLC27L1CD
TLC27L1CDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1CDG4 TLC27L1CDG4
TLC27L1CDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1CDR TLC27L1CDR
TLC27L1CDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1CDRG4 TLC27L1CDRG4
TLC27L1CP Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC27L1CP TLC27L1CP
TLC27L1CPE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC27L1CPE4 TLC27L1CPE4
TLC27L1ID Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1ID TLC27L1ID
TLC27L1IDG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1IDG4 TLC27L1IDG4
TLC27L1IDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1IDR TLC27L1IDR
TLC27L1IDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM TLC27L1IDRG4 TLC27L1IDRG4
TLC27L1IP Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC27L1IP TLC27L1IP
TLC27L1IPE4 Pb-Free (RoHS)  CU NIPDAU  N/A for Pkg Type TLC27L1IPE4 TLC27L1IPE4
TLC27L1 应用技术支持与电子电路设计开发资源下载
  1. TLC27L1 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)