TLC372M 低功耗 LinCMOS(TM) 双路比较器

This device is fabricated using LinCMOS™ technology and consists of two independent voltage comparators, each designed to operate from a single power supply. Operation from dual supplies is also possible if the difference between the two supplies is 2 V to 18 V. Each device features extremely high input impedance (typically greater than 1012Ω), allowing direct interfacing with high-impedance sources. The outputs are n-channel open-drain configurations and can be connected to achieve positive-logic wired-AND relationships.

The TLC372 has internal electrostatic discharge (ESD) protection circuits and has been classified with a 1000-V ESD rating using human body model testing. However, care should be exercised in handling this device as exposure to ESD may result in a degradation of the device parametric performance

TLC372M
Number of Channels 2    
Iq per channel (Max) (mA) 0.3    
Output Current (Min) (mA) 6    
tRESP Low - to - High (us) 0.2    
Output Type Open Collector, Open Drain    
VIO (25 deg C) (Max) (mV) 5    
Pin/Package 10CFP, 20LCCC, 8CDIP, 8PDIP, 8SOIC
VICR (Min) (V) 0    
VICR (Max) (V) 14.5    
Vs (Min) (V) 4    
Vs (Max) (V) 16    
Operating Temperature Range (C) -55 to 125    
Rating Military
TLC372M 特性
TLC372M 芯片订购指南
器件 状态 温度 价格 封装 | 引脚 封装数量 | 封装载体 丝印标记
5962-87658012A ACTIVE -55 to 125 16.04 | 1ku LCCC (FK) | 20 1 | TUBE  
5962-8765801PA ACTIVE -55 to 125 6.58 | 1ku CDIP (JG) | 8 1 | TUBE  
5962-9554901NXD ACTIVE -55 to 125 1.57 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
5962-9554901NXDR ACTIVE -55 to 125 1.57 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC372MD ACTIVE -55 to 125 0.46 | 1ku SOIC (D) | 8 75  
TLC372MDG4 ACTIVE   0.46 | 1ku SOIC (D) | 8 75  
TLC372MDR ACTIVE -55 to 125 0.46 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC372MDRG4 ACTIVE   0.46 | 1ku SOIC (D) | 8 2500  
TLC372MFKB ACTIVE -55 to 125 16.04 | 1ku LCCC (FK) | 20 1 | TUBE  
TLC372MJG ACTIVE -55 to 125 5.59 | 1ku CDIP (JG) | 8 1 | TUBE  
TLC372MJGB ACTIVE -55 to 125 6.58 | 1ku CDIP (JG) | 8 1 | TUBE  
TLC372MP ACTIVE -55 to 125 0.46 | 1ku PDIP (P) | 8 50  
TLC372MUB ACTIVE -55 to 125 14.20 | 1ku CFP (U) | 10 1 | TUBE  
TLC372M 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
5962-87658012A TBD   Call TI   Call TI 5962-87658012A 5962-87658012A
5962-8765801PA TBD   Call TI   Call TI 5962-8765801PA 5962-8765801PA
5962-9554901NXD Green (RoHS & no Sb/Br)   CU NIPDAU   Level-1-260C-UNLIM 5962-9554901NXD 5962-9554901NXD
5962-9554901NXDR Green (RoHS & no Sb/Br)   CU NIPDAU   Level-1-260C-UNLIM 5962-9554901NXDR 5962-9554901NXDR
TLC372MD Green (RoHS & no Sb/Br)   CU NIPDAU   Level-1-260C-UNLIM TLC372MD TLC372MD
TLC372MDG4 Green (RoHS & no Sb/Br)   CU NIPDAU   Level-1-260C-UNLIM TLC372MDG4 TLC372MDG4
TLC372MDR Green (RoHS & no Sb/Br)   CU NIPDAU   Level-1-260C-UNLIM TLC372MDR TLC372MDR
TLC372MDRG4 Green (RoHS & no Sb/Br)   CU NIPDAU   Level-1-260C-UNLIM TLC372MDRG4 TLC372MDRG4
TLC372MFKB TBD   POST-PLATE   N/A for Pkg Type TLC372MFKB TLC372MFKB
TLC372MJG TBD   A42   N/A for Pkg Type TLC372MJG TLC372MJG
TLC372MJGB TBD   A42   N/A for Pkg Type TLC372MJGB TLC372MJGB
TLC372MP Pb-Free (RoHS)   CU NIPDAU   N/A for Pkg Type TLC372MP TLC372MP
TLC372MUB TBD   A42   N/A for Pkg Type TLC372MUB TLC372MUB
TLC372M 应用技术支持与电子电路设计开发资源下载
  1. TLC372M 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪Comparator 比较器产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)