ECP100D-G 1 W 线性放大器

The TriQuint ECP100D-G is a high dynamic range driver amplifier ina low-cost surface mount package. The InGaP / GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1 dB power. The part is housed in a lead-free / green / RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as CDMA, W-CDMA, and LTE where high linearity and high power is required. The internal active bias allows the ECP100D-G to maintain high linearity over temperature and operate directly off a +5 V supply.

技术特性
  • 400 to 2300 MHz
  • 18 dB gain @ 900 MHz
  • +31.5 dBm P1dB
  • +46 dBm Output IP3
  • +5V single positive supply
  • Lead-free / green / RoHS compliant
  • 4 x 4 mm package
应用领域 APPLICATION
  • Defense / Homeland Security
  • Mobile Infrastructure
技术指标
频率(GHz) 增益(dB) P1dB (dBm) OIP3 (dBm) NF (dB) Vdd (V) Idd (mA) 封装信息
0.4 - 2.3 18 31 46 7 5 450 4x4mm QFN16
订购信息 Ordering Information
  • TQM756014
应用技术支持与电子电路设计开发资源下载 版本信息 大小
ECP100D-G封装信息:dwg    
ECP100D-G封装信息:pdf    
ECP100D-G布局文件