FP2189-G 1 W GaAs HFET
The TriQuint FP2189-G is a high performance 1 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to TriQuint's long history of producing high reliability and quality components. The FP2189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
技术特性
- 50 to 4000 MHz
- +30 dBm P1dB
- +43 dBm Output IP3
- High drain efficiency
- 18.5 dB gain @ 900 MHz
- Lead-free / green / RoHS compliant
- SOT-89 package
- MTTF > 100 Years
订购信息 Ordering Information
|
技术指标
| 频率(GHz) |
增益(dB) |
P1dB (dBm) |
OIP3 (dBm) |
NF/PAE |
Vdd (V) |
Idd (mA) |
封装 |
| 0.05 - 4 |
18 |
30 |
44 |
4.5 |
8 |
250 |
SOT-89 |
应用领域 APPLICATION
- CATV / DBS
- Defense / Homeland Security
- Fixed Wireless
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure
|
