FP31QF-F 2 W GaAs HFET_BDTIC代理FP31QF-F

FP31QF-F 2 W GaAs HFET

The TriQuint FP31QF-F is a high performance 2 Watt HFET (Heterostructure FET) in a low-cost lead-free / RoHS-compliant 28-pin 6x6 mm QFN (Quad Flatpack, No-Lead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 performance and an output power of +34 dBm at 1 dB compression. The device conforms to TriQuint's long history of producing high reliability and quality components. The FP31QF-F has an associated MTTF of a minimum of 100 years at a mounting temperature of 85°C. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.

技术特性

50 to 4000 MHz
18 dB gain @ 900 MHz
+34 dBm P1dB
+46 dBm Output IP3
High drain efficiency
Single voltage supply
Robust 1000V ESD, Class IC
Lead free / green / RoHS compliant
6 mm 28-pin QFN package

应用领域 APPLICATION

CATV / DBS
Defense / Homeland Security
Fixed Wireless
Industrial, Scientific and Medical (ISM)
Mobile Infrastructure
RFID
Wireless LAN (WLAN)

技术指标

频率(GHz)	增益(dB)	P1dB (dBm)	OIP3 (dBm)	NF/PAE	Vdd (V)	Idd (mA)	封装
0.05 - 4	18	34	46	3.5	9	450	6 x 6 mm

订购信息 Ordering Information

FP31QF-F

功能框图 Functional Block Diagram

应用技术支持与电子电路设计开发资源下载	版本信息	大小
FP31QF-F：S-参数
FP31QF-F：材料清单 - FP31QF-PCB1900S
FP31QF-F：材料清单 - FP31QF-PCB2140S
FP31QF-F：材料清单 - FP31QF-PCB900S
FP31QF-F：Gerber PCB 布局文件
FP31QF-F：封装材料清单
FP31QF-F：资质报告
FP31QF-F封装信息:pdf
FP31QF-F封装信息:dwg
FP31QF-F 数据资料DataSheet下载：PDF	Rev.V2	2 页