T1G6000528-Q3 7 W, 28 V, 20 MHz - 6 GHz GaN 射频功率晶体管
The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
技术特性
- Frequency: DC to 6 GHz
- Linear Gain: > 10 dB at 6 GHz
- Operating Voltage: 28 V
- Output Power (P3dB): > 7 W at 6 GHz
- Lead-free and RoHS compliant
- Low thermal resistance package
订购信息 Ordering Information
| T1G6000528-Q3 |
Packaged part |
EAR99 |
| T1G6000528-Q3-EVB3 |
Narrowband 3.0 to 3.5 GHz evaluation board |
EAR99 |
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 6 |
10 |
39.5 |
>50% |
28 |
50 |
|
应用领域 APPLICATION
- Cellular Infrastructure
- General Purpose RF Power
- Jammers
- Professional Radio Systems
- Radar
- Test Instrumentation
- Wideband and Narrowband Defense and Commercial Communication Systems
- WiMAX
T1G6000528-Q3 产品实物图
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