T1G6001528-Q3 18W, 28V, DC-6 GHz, GaN 射频功率晶体管
The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. This part is lead-free and RoHS compliant. Evaluation boards are available upon request.
技术特性
- Frequency: DC to 6 GHz
- Output Power (P3dB): 18 W at 6 GHz
- Linear Gain: > 10 dB at 6 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 6 |
15 |
43.4 |
>50% |
28 |
50 |
T1G6001528-Q3 产品实物图
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应用领域 APPLICATION
- Avionics
- Civilian Radar
- General Purpose RF Power
- Jammers
- Military Radar Systems
- Professional and Military Radio
- Radar
- Test Instrumentation
- Wideband Power Amplifiers
订购信息 Ordering Information
| T1G6001528-Q3 |
Packaged Transistor |
EAR99 |
| T1G6001528-Q3-EVB1 |
5-6 GHz Eval Board |
EAR99 |
功能框图 Functional Block Diagram
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