TGF2023-02 12 W用于SiC HEMT上的分立电源 GaN

The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 41 dBm of saturated output power with power gain of 18dB at 3 GHz. The maximum power added efficiency is 58% which makes the TGF2023-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

技术特性
  • Frequency range: DC to 18 GHz
  • 41 dBm nominal Psat at 3 GHz
  • 58% maximum PAE
  • 18 dB nominal power gain
  • Bias: Vd = 28 to 32 V, Idq = 250 mA, Vg = -3.6 V typical
  • Technology: 0.25 um Power GaN on SiC
  • Chip dimensions: 0.82 x 0.92 x 0.10 mm
技术指标
频率(GHz) 增益(dB) 功率(dBm) NF/PAE Vd(V) IQ(mA)
DC - 18 15 > 41 55% 28 - 40 250
应用领域 APPLICATION
  • Broadband Wireless
  • Military
  • Space
订购信息 Ordering Information
  • TGF2023-02
机械图样Mechanical Drawing
TGF2023-02 机械图样
应用技术支持与电子电路设计开发资源下载 版本信息 大小
TGF2023-02:S 参数    
TGF2023-02 数据资料DataSheet下载:PDF Rev.V2 2 页