TGF4230-SCC 1.2 mm HFET
The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4230-SCC is readily assembled using automatic equipment.
技术特性
- Nominal Pout of 28.5 dBm at 8.5 GHz
- Nominal gain of 10.0 dB at 8.5 GHz
- Nominal PAE of 55 % at 8.5 GHz
- 1200 um HFET
- Bias at 8 V, 96 mA
- Dimensions: 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 12.0 |
10 |
28.5 |
55% |
8 |
96 |
订购信息 Ordering Information
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应用领域 APPLICATION
- Cellular Base Stations
- High Dynamic Range LNAs
- Military
- Space
机械图样Mechanical Drawin
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