TGF4350 0.3 mm, 0.25-µm mmW pHEMT 2MI
The TriQuint TGF4350 is a single-gate GaAs field-effect transistor (FET) used for low noise applications DC to 18 GHz. Its bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire bonding processes. The TGF4350 is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended.
技术特性
- Frequency range: DC to 22 GHz
- 0.25 um pHEMT technology
- 1.2 dB NF, 14.5 dB associated
- Gain at 10 GHz, 3 V operation
- Floating source configuration
- Chip dimensions: 0.620 x 0.514 mm
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 22.0 |
13@10GHz |
16 |
0.8 dB@10GHz |
3 |
15 |
|
应用领域 APPLICATION
订购信息 Ordering Information
机械图样Mechanical Drawing
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