GTVA261701FA V1 R2

High Power RF GaN HEMT, 170 W, 50 V, 2620 – 2690 MHz

ParametricGTVA261701FA V1 R2
Flange TypeEarless
MatchingInput
Frequency Band  min  max2620.0MHz  2690.0MHz
P1dB170.0W
Supply Voltage50.0V
Pout50.0W
Gain18.0dB
Test SignalWCDMA
Sales Product NameGTVA261701FA V1 R2
OPNGTVA261701FAV1R2XTMA1
Product Statusactive and preferred
Package NameH-37265J-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Input Matched
  • Typical Pulsed CW performance, 2690 MHz, 48 V, single side
  • Output power at P3dB = 170 W Efficiency = 72% Gain = 16 dB
  • Output power at P3dB = 170 W
  • Efficiency = 72%
  • Gain = 16 dB
  • GaN HEMT technology
  • High power density
  • High efficiency
  • RoHS-compliant
Data Sheet
TitleSizeDateVersion
GTVA261701FA DS,EN219 KB28 三月 201503_00
Reference Design
TitleSizeDateVersion
GTVA261701FA RDEN186 KB01 六月 201602_00
Package Data
TitleSizeDateVersion
H-37265J-2-1 | GTVA261701FAV1R2XTMA1EN343 KB11 四月 201601_00
EN GTVA261701FA+V1+R2
EN GTVA261701FA+V1+R2
EN GTVA261701FA+V1+R2