IDC08S120E

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricIDC08S120E
TechnologythinQ!™ SiC diode chips
VDS  max1200.0V
IF  max7.5A
I(FSM)  max39.0A
VF1.6V
IR  max180.0µA
Sales Product NameIDC08S120E
OPNIDC08S120EX1SA3
Product Statusdiscontinued
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Revolutionary semiconductor material - silicon carbide
  • Switching behaviour benchmark
  • No Reverse Recovery / no forward recovery
  • Temperature independent switching behaviour
  • Qualified according to JEDEC based on target applications
Target Applications:
  • SMPS
  • PFC
  • Snubber
Data Sheet
TitleSizeDateVersion
IDC08S120E,EN60 KB05 九月 201202_02
EN IDC08S120E