IPB160N04S4-02D

ParametricIPB160N04S4-02D
RDS (on) (@10V)  max1.9mΩ
QG70.0nC
VDS  max40.0V
ID  max160.0A
RthJC  max0.65K/W
Ptot  max231.0mW
IDpuls  max640.0A
VGS(th)  min  max2.0V  4.0V
Summary of Features:
  • N-channel - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (ELV compliant 100% lead free)
  • 100% Avalanche tested
  • Ultra low RDSon
  • Ultra high ID
Benefits:
  • world's lowest RDS at 40V (on)
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.
  • Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
Data Sheet
TitleSizeDateVersion
IPB160N04S4-02D Data Sheet,EN126 KB21 十月 201101_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
EN IPB160N04S4-02D
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E