IPD50N04S3-09

ParametricIPD50N04S3-09
RDS (on) (@10V)  max9.0mΩ
QG20.0nC
VDS  max40.0V
ID  max50.0A
RthJC  max2.4K/W
Ptot  max63.0W
IDpuls  max200.0A
VGS(th)  min  max2.1V  4.0V
Sales Product NameIPD50N04S3-09
OPNIPD50N04S309ATMA1
Product Statusnot for new design
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Summary of Features:
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Package (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • Low switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).
  • Body applications
Data Sheet
TitleSizeDateVersion
IPD50N04S3-09,EN182 KB03 十一月 200901_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_06-34-15_MA000461960_PG-TO252-3-11.pdf24 KB31 十月 201301_00
Package Data
TitleSizeDateVersion
PG-TO252-3-11 | IPD50N04S309ATMA1EN468 KB11 四月 201601_00
EN IPD50N04S3-09
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_06-34-15_MA000461960_PG-TO252-3-11.pdf IPD50N04S3-09
EN IPD50N04S3-09