IPG20N04S4-09

ParametricIPG20N04S4-09
RDS (on) (@10V)  max8.6mΩ
RDS (on)  max8.6mΩ
QG21.7nC
VDS  max40.0V
ID  max20.0A
RthJC  max2.8K/W
Ptot  max54.0W
IDpuls  max80.0A
VGS(th)  min  max2.0V  4.0V
Sales Product NameIPG20N04S4-09
OPNIPG20N04S409ATMA1
Product Statusnot for new design
Package NamePG-TDSON-8
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size5000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Dual N-channel Normal Level - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.
  • Bond wire is 200um for up to 20A current
  • Larger source lead frame connection for wire bonding
  • Package: PG-TDSON-8-4
  • Same thermal and electrical performance as a DPAK with the same die size.
  • Exposed pad provides excellent thermal transfer (varies by die size)
  • Two N-Channel MOSFETs in one package with 2 isolated leadframes
Target Applications:
  • Small loads control switching
  • Body applications
Data Sheet
TitleSizeDateVersion
IPG20N04S4-09 DataSheet,EN142 KB18 十月 201001_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Simulation Models
TitleSizeDateVersion
OptiMOS-T2_40V_PSpiceEN160 KB05 二月 201601_01
Package Data
TitleSizeDateVersion
PG-TDSON-8-4 | IPG20N04S409ATMA1EN578 KB11 四月 201601_00
EN IPG20N04S4-09
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
EN IPP70N04S4-06
EN IPG20N04S4-09