IPI45P03P4L-11

ParametricIPI45P03P4L-11
RDS (on) (@10V)  max11.1mΩ
RDS (on)  max11.1mΩ
RDS (on) (@4.5V)  max18.7mΩ
QG42.0nC
VDS  max-30.0V
ID  max-45.0A
RthJC  max2.6K/W
Ptot  max58.0W
IDpuls  max-180.0A
VGS(th)  min  max-1.0V  -2.0V
Sales Product NameIPI45P03P4L-11
OPNIPI45P03P4L11AKSA1
Product Statusdiscontinued
Package NamePG-TO262-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size500
Packing TypeTUBE
Summary of Features:
  • P-channel - Logic Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Intended for reverse battery protection
Benefits:
  • No charge pump required for high side drive
  • Simple interface drive circuit
  • World's lowest RDSon at 30V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Standard packages TO-252, TO-263, TO-220, TO-262
Target Applications:
  • High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
  • Bridge configuration could be realized with 30V P-Channels high side device with no need of charge pump
Data Sheet
TitleSizeDateVersion
IPP_B_I45P03P4L-11,EN169 KB05 十二月 200801_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_12-53-50_MA000462532_PG-TO262-3-1.pdf24 KB31 十月 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS_P2_PSpice.zipEN92 KB07 一月 201500_00
Package Data
TitleSizeDateVersion
PG-TO262-3-1 | IPI45P03P4L11AKSA1EN435 KB11 四月 201601_00
EN IPP45P03P4L-11
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_12-53-50_MA000462532_PG-TO262-3-1.pdf IPI45P03P4L-11
EN IPP80P03P4-05
EN IPI45P03P4L-11