IR21531S

Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6µs Deadtime in a 8-lead SOIC package and different phase

ParametricIR21531S
Package8-lead SOIC
VCC  min  max10.0V  20.0V
Output Current (Sink)400.0mA
Moisture Sensitivity Level2
Output Current (Source)250.0mA
Output Voltage  min  max10.0V  20.0V
TopologyHalf-Bridge Resonant
Sales Product NameIR21531S
OPNIR21531STRPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level2
OPNIR21531SPBF
Product Statusactive and preferred
Package NameSOIC 8N
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level2
Benefits:
  • Integrated 600V Half-bridge gate driver
  • 15.6V zener clamp on Vcc
  • True micropower start up
  • Tighter initial deadtime control
  • Low temperature coefficient deadtime
  • Shutdown feature (1/6th Vcc) on CT pin
  • Increased undervoltage lockout Hysteresis (1V)
  • Lower power level-shifting circuit
  • Constant LO, HO pulse widths at startup
  • Lower di/dt gate driver for better noise immunity
  • Low side output in phase with RT
  • Internal 50nsec (typ.) bootstrap diode (IR21531D)
  • Excellent latch immunity on all inputs and outputs
  • ESd protection on all leads
  • Also available LEAD-FREE
Target Applications:
  • Lighting Fluorescent Ballast
  • Primary Side
Data Sheet
TitleSizeDateVersion
Data Sheet - IR21531,EN217 KB18 六月 2001
Application Notes
TitleSizeDateVersion
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 十月 2004
HV Floating MOS Gate DriversEN425 KB27 十月 2004
Article
TitleSizeDateVersion
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 四月 2000
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 四月 2000
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S