IR25603

High voltage half-bridge gate driver with a front end oscillator

ParametricIR25603
Package8 Lead
FeaturesSelf-Oscillating and Programmable Swithing Frequency
Output Current (Sink)260.0mA
UVLOVcc
VOFFSET600.0V
Channels2.0
dt/sdt (typ)1200 ns
Moisture Sensitivity Level2
Output Current (Source)180.0mA
TopologyHalf Bridge
VBSUV- / VCCUV-    (min)  (max)8.0V  (7.2V)  (8.8V)
VBSUV+ / VCCUV+    (min)  (max)9.0V  (8.1V)  (9.9V)
Sales Product NameIR25603
OPNIR25603STRPBF
Product Statusactive
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level2
OPNIR25603SPBF
Product Statusactive
Package NameSOIC 8N
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level2
OPNIR25603PBF
Product Statusactive
Package NamePDIP8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • Floating channel designed for bootstrap operation
  • Integrated 600 V half-bridge gate driver
  • 15.6 V zener clamp on Vcc
  • True micropower start up
  • Tighter initial dead time control
  • Low temperature coefficient dead time
  • Shutdown feature (1/6th Vcc) on CT pin
  • Increased undervoltage lockout Hysteresis (1 V)
  • Lower power level-shifting circuit
  • Constant LO, HO pulse widths at startup
  • Lower di/dt gate driver for better noise immunity
  • Low side output in phase with RT
  • Excellent latch immunity on all inputs and outputs
  • ESd protection on all leads
Target Applications:
  • Air Conditioner
  • Dishwasher
  • Dryer
  • Fan
  • Lighting Fluorescent Ballast
  • Lighting HID
  • Induction Cooker
  • Pump
  • Refridgeration
  • Solar
  • UPS
  • Washing Machine
  • Welding
功能框图
Data Sheet
TitleSizeDateVersion
Data Sheet - IR25603,EN688 KB21 九月 2012
Application Notes
TitleSizeDateVersion
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTsEN125 KB27 十月 2004
HV Floating MOS Gate DriversEN425 KB27 十月 2004
Article
TitleSizeDateVersion
Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTsEN607 KB01 四月 2000
Low Gate Charge HEXFETS simplify Gate Drive and Lower CostEN167 KB01 四月 2000
EN IR25603
EN IR21531S
EN IR21531S
EN IR21531S
EN IR21531S