IRF1010NS

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ParametricIRF1010NS
PackageD2PAK (TO-263)
VDS  max55.0V
RDS (on) (@10V)  max11.0mΩ
RDS (on)  max11.0mΩ
PolarityN
ID  max60.0A
ID (@ TC=100°C)  max60.0A
ID (@ TC=25°C)  max84.0A
Ptot  max3.8W
QG80.0nC
MountingSMD
VGS  max20.0V
Moisture Sensitivity Level1
Qgd27.3nC
RthJC  max0.85K/W
Tj  max175.0°C
Sales Product NameIRF1010NS
OPNIRF1010NSTRRPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL RIGHT
Moisture Level1
OPNIRF1010NSPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
OPNIRF1010NSTRLPBF
Product Statusactive
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF1010NSEN2 KB18 六月 2001
Saber Model - IRF1010NSEN2 KB18 六月 2001
EN IDV20E65D1
EN IRF1010NS
EN IRF1010NS