IRF5801

200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

ParametricIRF5801
PackageTSOP-6
VDS  max200.0V
RDS (on)  max2200.0mΩ
RDS (on) (@10V)  max2200.0mΩ
PolarityN
ID (@ TA=70°C)  max0.48A
ID (@ TA=25°C)  max0.6A
ID (@ TC=25°C)  max0.6A
Ptot (@ TA=25°C)  max2.0W
Ptot  max2.0W
QG3.9nC
RthJA  max62.5K/W
MountingSMD
Moisture Sensitivity Level1
Tj  max150.0°C
Qgd2.2nC
VGS  max30.0V
Sales Product NameIRF5801
OPNIRF5801TRPBF
Product Statusactive
Package NameTSOP6L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Target Applications:
  • DC Switches
  • Load Switch
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF5801,EN224 KB07 八月 2005
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF5801EN2 KB18 六月 2001
Saber Model - IRF5801EN2 KB18 六月 2001
EN IRF5801
EN IDV20E65D1
EN IRF5801
EN IRF5801